Compensation in boron-doped CVD diamond
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Gabrysch, Markus ;Majdi, Saman ;HallΓ©n, Anders ;Linnarsson, Margareta ;SchΓΆner,
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Article
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2008
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John Wiley and Sons
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English
β 438 KB
## Abstract Hallβeffect measurements on single crystal boronβdoped CVD diamond in the temperature interval 80β450 K are presented together with SIMS measurements of the dopant concentration. Capacitanceβvoltage measurements on rectifying Schottky junctions manufactured on the boronβdoped structures