The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these poi
β¦ LIBER β¦
Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films
β Scribed by Lu, C.; Tian, S.B.; Gu, C.Z.; Li, J.J.
- Book ID
- 122457806
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 840 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0925-9635
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