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Geometry of crystal structure with defects. I. Euclidean picture

✍ Scribed by Andrzej Trzesowski


Publisher
Springer
Year
1987
Tongue
English
Weight
917 KB
Volume
26
Category
Article
ISSN
0020-7748

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Defect structure of silicon crystals imp
✍ Shalimov, Artem ;Shcherbachev, Kirill D. ;Bak-Misiuk, Jadwiga ;Misiuk, Andrzej πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 517 KB

## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 Γ— 10^16^ cm^–2^. After implantation, Si:H samples were annealed at 450 and 650 Β°C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as‐implanted and processed Si:H was