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Ge surface segregation during Si1−xGex(0 1 1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6

✍ Scribed by N. Taylor; H. Kim; J.E. Greene

No coin nor oath required. For personal study only.

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Ge surface segregation during Si1−xGex(0&#xa0;1&#xa0;1) gas-source molecular beam epitaxy from Si2H6 and Ge2H6