Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well
β Scribed by M. Ono; S. Matsuzaka; Y. Ohno; H. Ohno
- Book ID
- 106428686
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 284 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0896-1107
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π SIMILAR VOLUMES
We present the results of an investigation of the spin relaxation dynamics of electrons, holes and excitons in GaAs quantum wells by means of subpicosecond spectroscopy of the photoluminescence polarization. The band to band luminescence was studied in n and p modulation-doped quantum wells. We show
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110