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Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

✍ Scribed by Wang, Ronghua; Saunier, Paul; Xing, Xiu; Lian, Chuanxin; Gao, Xiang; Guo, Shiping; Snider, Gregory; Fay, Patrick; Jena, Debdeep; Xing, Huili

Book ID: 120544538
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 319 KB
Volume: 31
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2072771

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