Gas-source MBE growth of freestanding Si
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J.L. Liu; S.J. Cai; G.L. Jin; Y.S. Tang; K.L. Wang
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Article
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1999
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Elsevier Science
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English
โ 124 KB
Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), ( 111), (110), and ( 113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.