Optical properties of gas source MBE gro
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Y. Gu; Y.G. Zhang; A.Z. Li; H. Li
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Article
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2007
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Elsevier Science
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English
โ 449 KB
Optical properties of silicon (Si) doped Al x In 1-x P grown by gas source molecular beam epitaxy (GSMBE) have been investigated by using photoluminescence (PL). The PL peaks of Al x In 1-x P shift to higher energy side as Al mole fraction increases in direct bandgap region, and the fractions of str