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Gas source MBE growth and doping characteristics of AlInP on GaAs

โœ Scribed by Y. Gu; Y.G. Zhang; H. Li; A.Z. Li; C. Zhu


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
174 KB
Volume
131
Category
Article
ISSN
0921-5107

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Optical properties of gas source MBE gro
โœ Y. Gu; Y.G. Zhang; A.Z. Li; H. Li ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 449 KB

Optical properties of silicon (Si) doped Al x In 1-x P grown by gas source molecular beam epitaxy (GSMBE) have been investigated by using photoluminescence (PL). The PL peaks of Al x In 1-x P shift to higher energy side as Al mole fraction increases in direct bandgap region, and the fractions of str