Gas-phase copper carbide clusters

✍ Scribed by Y. Yamada; A.W. Castleman Jr.

• Book ID: 103033015
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 539 KB
• Volume: 204
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(93)85617-w

✦ Synopsis

Copper carbide clusters are formed utilizing a gas aggregation source in which CIH2 is passed over a heated crucible containing copper; the abundance of the copper carbide changes depending on the concentration of the reactant in the carrier He gas. Dominant peaks are Cu,Cg, (n=3, 5, 7, 9, 11, 13, and 15, m= 1,2) at small &Hz concentrations and Cu~,,+,C& (n= I-LO) at high concentrations. These peaks reflect the electronic stability of the cluster ions resulting from fragmentation. Magic numbers at n=5inCuI.+, zn C+ and for other clusters (Cu,CB+ , Cu&u&, Cu&S+ , Cu&&, and Cu&& ) arise due to the geometrical stability of compact structures.