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GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia

✍ Scribed by M. Callahan; B.-G. Wang; K. Rakes; D. Bliss; L. Bouthillette; M. Suscavage; S.-Q. Wang

Book ID: 106392904
Publisher: Springer
Year: 2006
Tongue: English
Weight: 506 KB
Volume: 41
Category: Article
ISSN: 0022-2461
DOI: 10.1007/s10853-006-7428-4

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## Abstract Growth of GaN under pressure from solution in gallium results in almost dislocation free plate‐like crystals but with size limited to approx. 1 cm (lateral) and 100 µm (thickness). On the other hand, deposition of GaN by HVPE on the pressure grown substrates allows stable crystallizatio

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