This Book Discusses The Important Technological Aspects Of The Growth Of Gan Single Crystals By Hvpe, Mocvd, Ammonothermal And Flux Methods For The Purpose Of Free-standing Gan Wafer Production.
โฆ LIBER โฆ
[Springer Series in Materials Science] Technology of Gallium Nitride Crystal Growth Volume 133 || Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
โ Scribed by Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal
- Book ID
- 121441498
- Publisher
- Springer Berlin Heidelberg
- Year
- 2010
- Tongue
- German
- Weight
- 946 KB
- Category
- Article
- ISBN
- 3642048307
No coin nor oath required. For personal study only.
โฆ Synopsis
This Book Discusses The Important Technological Aspects Of The Growth Of Gan Single Crystals By Hvpe, Mocvd, Ammonothermal And Flux Methods For The Purpose Of Free-standing Gan Wafer Production.
๐ SIMILAR VOLUMES
[Springer Series in Materials Science] T
โ
Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal
๐
Article
๐
2010
๐
Springer Berlin Heidelberg
๐
German
โ 773 KB
[Springer Series in Materials Science] T
โ
Ehrentraut, Dirk; Meissner, Elke; Bockowski, Michal
๐
Article
๐
2010
๐
Springer Berlin Heidelberg
๐
German
โ 607 KB
This Book Discusses The Important Technological Aspects Of The Growth Of Gan Single Crystals By Hvpe, Mocvd, Ammonothermal And Flux Methods For The Purpose Of Free-standing Gan Wafer Production.