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GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

✍ Scribed by Ozgur, U.; Huiyong Liu; Xing Li; Xianfeng Ni; Morkoç, H.

Book ID: 114565262
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 856 KB
Volume: 98
Category: Article
ISSN: 0018-9219
DOI: 10.1109/jproc.2010.2043210

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## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con