The variations of the equivalent parallel resistance and capacitance of anodic films formed on Ta and Nb in varying concentrations of H2SO4 suggest that the volume of film formed per coulomb is much greater in 100)~, acid, although the dielectric constant is substantially unchanged. The field requir
Galvanoluminescence during the pore-filling of anodic films on aluminum formed in sulphuric acid
โ Scribed by S. Ikonopisov; A. Girginov; M. Machkova
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 283 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0013-4686
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โฆ Synopsis
The galvanoluminescent brightness on filling of porous films obtained in H,SO, solution is studied. It is found that the matrix of the porous film which is filled up contributes to the light emission. It is also found that the light yield increases with growing thickness of the films on completely filled up pores and decreases on lilm thickness growing when the pores are very deep. Thus it is concluded that the light emission is only due to the barrier part of the porous f&n while the overlying porous-part absorbs some of the light. The galvanoluminescent brightness is also strongly affected by the type of the filling electrolyte US&.
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X-ray photoelectron spectroscopy (XPS) was used to examine the corrosion films formed on nanocrystalline (nc) and amorphous Ni-P alloys in 0.1 M H,SO,. Neither the nc nor the amorphous alloys were found to exhibit passivity. An enrichment of elemental P compared to Ni was observed at the surface of
## Abstract The effects of samarium on the properties of the anodic Pb(II) oxides films formed on lead at 0.9 V (vs. Hg/Hg~2~SO~4~) in 4.5 mol/L H~2~SO~4~ solution were studied using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS) and scanning electron micrographs (SEM)