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Galvano- and thermomagnetic voltages in double-layer magnetoresistive elements

✍ Scribed by Karpenkov, S.K.

Book ID
114546947
Publisher
IEEE
Year
1990
Tongue
English
Weight
185 KB
Volume
26
Category
Article
ISSN
0018-9464

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Layer-thickness dependence in tunneling
Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures
✍ Maya Watanabe; Hiroshi Toyao; Jun Okabayashi; Takeshi Yamaguchi; Junji Yoshino πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 330 KB

We have investigated the layer-thickness dependence on tunneling magnetoresistance (TMR) in double-barrier structures using GaMnAs-based magnetic tunneling junctions in order to clarify the origin of low threshold current density for current-driven magnetization orientation reversal. The TMR charact