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Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir–Mn exchange-biased double tunnel junctions

✍ Scribed by Y Saito; M Amano; K Nakajima; S Takahashi; M Sagoi

Book ID: 114224288
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 291 KB
Volume: 223
Category: Article
ISSN: 0304-8853
DOI: 10.1016/s0304-8853(00)01270-1

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