Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices

✍ Scribed by G.W. Paterson; J.A. Wilson; D. Moran; R. Hill; A.R. Long; I. Thayne; M. Passlack; R. Droopad

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 630 KB
• Volume: 135
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2006.08.026