✦ LIBER ✦
Charge Redistribution at GaN–Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN Faces
✍ Scribed by Therrien, R. ;Lucovsky, G. ;Davis, R. F.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 143 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0031-8965
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