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Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency

✍ Scribed by Michael A. Mastro; Byung-Jae Kim; Younghun Jung; Jennifer K. Hite; Charles R. Eddy Jr.; Jihyun Kim


Book ID
108079408
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
856 KB
Volume
11
Category
Article
ISSN
1567-1739

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## Abstract Low defect density __a__ ‐plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, __a__ ‐plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown re