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Gallium Nitride (Ga: N) II

✍ Scribed by Jacques I. Pankove and Theodore D. Moustakas (Eds.)


Publisher
Academic Press
Year
1998
Tongue
English
Leaves
509
Series
Semiconductors and Semimetals 57
Category
Library

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✦ Synopsis


Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

✦ Table of Contents


Content:
Edited by
Page iii

Copyright page
Page iv

Preface
Pages xi-xiii
Jacques I. Pankove, Theodore D. Moustakas

List of Contributors
Pages xv-xvi

Chapter 1 Hydride Vapor Phase Epitaxial Growth of III-V Nitrides Original Research Article
Pages 1-31
Richard J. Molnar

Chapter 2 Growth of III-V Nitrides by Molecular Beam Epitaxy Original Research Article
Pages 33-128
T.D. Moustakas

Chapter 3 Defects in Bulk GaN and Homoepitaxial Layers Original Research Article
Pages 129-156
Zuzanna Liliental-Weber

Chapter 4 Hydrogen in III-V Nitrides Original Research Article
Pages 157-184
Chris G. Van de Walk, Noble M. Johnson

Chapter 5 Characterization of Dopants and Deep Level Defects in Gallium Nitride Original Research Article
Pages 185-207
W. GΓΆtz, N.M. Johnson

Chapter 6 Stress Effects on Optical Properties Original Research Article
Pages 209-274
Bernard Gil

Chapter 7 Strain in GaN Thin Films and Heterostructures Original Research Article
Pages 275-317
Christian Kisielowski

Chapter 8 Nonlinear Optical Properties of Gallium Nitride Original Research Article
Pages 319-370
Joseph A. Miragliott, Dennis K. Wickenden

Chapter 9 Magnetic Resonance Investigations on Group III-Nitrides Original Research Article
Pages 371-406
B.K. Meyer

Chapter 10 GaN and AlGaN Ultraviolet Detectors Original Research Article
Pages 407-439
M.S. Shur, M. Asif Khan

Chapter 11 III–V Nitride-Based X-ray Detectors Original Research Article
Pages 441-465
C.H. Qiu, J.I. Pankove, C. Rossington

Index
Pages 467-472


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