Since its inception in 1966, the series of numbered volumes known as <b>Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous l
Gallium Nitride (Ga: N) II
β Scribed by Jacques I. Pankove and Theodore D. Moustakas (Eds.)
- Publisher
- Academic Press
- Year
- 1998
- Tongue
- English
- Leaves
- 509
- Series
- Semiconductors and Semimetals 57
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
β¦ Table of Contents
Content:
Edited by
Page iii
Copyright page
Page iv
Preface
Pages xi-xiii
Jacques I. Pankove, Theodore D. Moustakas
List of Contributors
Pages xv-xvi
Chapter 1 Hydride Vapor Phase Epitaxial Growth of III-V Nitrides Original Research Article
Pages 1-31
Richard J. Molnar
Chapter 2 Growth of III-V Nitrides by Molecular Beam Epitaxy Original Research Article
Pages 33-128
T.D. Moustakas
Chapter 3 Defects in Bulk GaN and Homoepitaxial Layers Original Research Article
Pages 129-156
Zuzanna Liliental-Weber
Chapter 4 Hydrogen in III-V Nitrides Original Research Article
Pages 157-184
Chris G. Van de Walk, Noble M. Johnson
Chapter 5 Characterization of Dopants and Deep Level Defects in Gallium Nitride Original Research Article
Pages 185-207
W. GΓΆtz, N.M. Johnson
Chapter 6 Stress Effects on Optical Properties Original Research Article
Pages 209-274
Bernard Gil
Chapter 7 Strain in GaN Thin Films and Heterostructures Original Research Article
Pages 275-317
Christian Kisielowski
Chapter 8 Nonlinear Optical Properties of Gallium Nitride Original Research Article
Pages 319-370
Joseph A. Miragliott, Dennis K. Wickenden
Chapter 9 Magnetic Resonance Investigations on Group III-Nitrides Original Research Article
Pages 371-406
B.K. Meyer
Chapter 10 GaN and AlGaN Ultraviolet Detectors Original Research Article
Pages 407-439
M.S. Shur, M. Asif Khan
Chapter 11 IIIβV Nitride-Based X-ray Detectors Original Research Article
Pages 441-465
C.H. Qiu, J.I. Pankove, C. Rossington
Index
Pages 467-472
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