Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landm
Gallium Nitride (Ga: N) I
β Scribed by Jacques I. Pankove and Theodore D. Moustakas (Eds.)
- Publisher
- AP
- Year
- 1997
- Tongue
- English
- Leaves
- 500
- Series
- Semiconductors and Semimetals 50
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
β¦ Table of Contents
Content:
Edited by
Pages ii-iii
Copyright page
Page iv
Preface
Page xi
Jacques I. Pankove, Theodore D. Moustakas
List of Contributors
Pages xiii-xv
Chapter 1 Introduction: A Historical Survey of Research on Gallium Nitride Original Research Article
Pages 1-10
J.I. Pankove, T.D. Moustakas
Chapter 2 Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides Original Research Article
Pages 11-37
S.P. DenBaars, S. Keller
Chapter 3 Growth of Group IIIβA Nitrides by Reactive Sputtering Original Research Article
Pages 39-54
W.A. Bryden, T.J. Kistenmacher
Chapter 4 Thermochemistry of IIIβN Semiconductors Original Research Article
Pages 55-101
N. Newman
Chapter 5 Etching of III Nitrides Original Research Article
Pages 103-126
S.J. Pearton, R.J. Shul
Chapter 6 Indium-based Nitride Compounds Original Research Article
Pages 127-166
S.M. Bedair
Chapter 7 Crystal Structure of Group III Nitrides Original Research Article
Pages 167-192
A. Trampert, O. Brandt, K.H. Ploog
Chapter 8 Electronic and Optical Properties of IIIβV Nitride based Quantum Wells and Superlattices Original Research Article
Pages 193-257
H. MorkoΓ§, F. Hamdani, A. Salvador
Chapter 9 Doping in the III-Nitrides Original Research Article
Pages 259-277
K. Doverspike, J.I. Pankove
Chapter 10 High Pressure Studies of Defects and Impurities in Gallium Nitride Original Research Article
Pages 279-303
T. Suski, P. Perlin
Chapter 11 Optical Properties of GaN Original Research Article
Pages 305-368
B. Monemar
Chapter 12 Band Structure of the Group III Nitrides Original Research Article
Pages 369-408
W.R.L. Lambrecht
Chapter 13 Phonons and Phase Transitions in GaN Original Research Article
Pages 409-429
N.E. Christensen, P. Perlin
Chapter 14 Applications of LEDs and LDs Original Research Article
Pages 431-457
S. Nakamura
Chapter 15 Lasers Original Research Article
Pages 459-472
I. Akasaki, H. Amano
Chapter 16 Nonvolatile Random Access Memories in Wide Bandgap Semiconductors Original Research Article
Pages 473-491
James A. Cooper Jr.
Index
Pages 493-501
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