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Gallium and nitrogen vacancies in GaN: Impurity decoration effects

โœ Scribed by S. Hautakangas; V. Ranki; I. Makkonen; M.J. Puska; K. Saarinen; L. Liszkay; D. Seghier; H.P. Gislason; J.A. Freitas; Jr; R.L. Henry; X. Xu; D.C. Look

Book ID
108239044
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
138 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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Atomic structure and relative stability
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โœ Bรฉrรฉ, A. ;Belabbas, I. ;Petit, S. ;Nouet, G. ;Ruterana, P. ;Chen, J. ;Koulidiati ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 282 KB

## Abstract The atomic and electronic structures of gallium and nitrogen interstitial created at the 8โ€interface of the (2$\bar 5$30) __ฮฃ__ = 19 (__ฮธ__ = 13.2ยฐ) tilt grain boundary in GaN were investigated by densityโ€functional based tightโ€binding calculations. We found that the structure of lowest