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Gain Saturation in (In,Ga)N/GaN/(Al,Ga)N Laser Structures

✍ Scribed by Michler, P. ;Lange, O. ;Vehse, M. ;Gutowski, J. ;Bader, S. ;Hahn, B. ;Lugauer, H.-J. ;H�rle, V.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
107 KB
Volume
180
Category
Article
ISSN
0031-8965

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For the first time, we observed exciton dead layers in Pt/GaN Schottky diodes with N and Ga-face polarity. We show that these layers determine the shape of electroreflectance and photocurrent spectra close to the band gap in dependence on the bias voltage. Analysis of experimental data using a spati