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GaAs/(Ordered)GaInP2 Heterostructures under Pressure and High Magnetic Fields

✍ Scribed by J. Zeman; G. Martinez; P. Y. Yu; S. H. Kwok; K. Uchida

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
247 KB
Volume
211
Category
Article
ISSN
0370-1972

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✦ Synopsis

The results of extended studies of photoluminescence (PL) and up-converted PL (UPL) of partially ordered GaInP 2 alloy layers under hydrostatic pressure and high magnetic field are presented. It appears that the efficient UPL is observed when the GaAs/GaInP 2 interface has a type II alignment. This condition can be reached also by hydrostatic pressure. Dramatic changes of the character of PL spectra measured on less ordered samples are explained by pressure and/or magnetic field induced localization of electrons in small domains in GaInP 2 nearby the interface.

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