𝔖 Bobbio Scriptorium

✦ LIBER ✦

GaAs MESFET circuit simulation model including negative differential mobility

✍ Scribed by Takada, T.; Yokoyama, K.; Hirayama, M.

Book ID: 121216598
Publisher: The Institution of Electrical Engineers
Year: 1981
Tongue: English
Weight: 260 KB
Volume: 17
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:19810094

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

DC model of GaAs MESFETs improving circu

DC model of GaAs MESFETs improving circuit simulation

✍ Giorgio, A.; Passaro, V.M.N.; Perri, A.G. 📂 Article 📅 2000 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 658 KB

A MESFET Variable-Capacitance Model for

A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation

✍ Takada, T.; Yokoyama; Kiyoyuki; Ida, M.; Sudo, T. 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 618 KB

Intrinsic GaAs MESFET equivalent circuit

Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations

✍ Curtice, W.R. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 619 KB

A portable analytical GaAs MESFET simula

A portable analytical GaAs MESFET simulation model including temperature and negative differential mobility effects: M. Ansersson (Semicond. Lab., Tech. Res. Centre of Finland, Espoo, Finland) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 203-6

📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 92 KB

[IEEE IEEE 1988 Custom Integrated Circui

[IEEE IEEE 1988 Custom Integrated Circuits Conference - Rochester, NY, USA (16-19 May 1988)] Proceedings of the IEEE 1988 Custom Integrated Circuits Conference - A simple GaAs MESFET model for circuit simulation reflecting the dependence on device geometry and process

✍ Tarasewicz, S.W. 📂 Article 📅 1988 🏛 IEEE ⚖ 287 KB

[IEEE IEEE International Symposium on Ci

[IEEE IEEE International Symposium on Circuits and Systems - New Orleans, LA, USA (1-3 May 1990)] IEEE International Symposium on Circuits and Systems - Design of a GaAs operational amplifier using a self-backgating MESFET model including deep-level trap effects

✍ Lee, M.; Forbes, L.; Hallen, T. 📂 Article 📅 1990 🏛 IEEE ⚖ 359 KB