๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

GaAs FET Principles and Technology

โœ Scribed by Robson, P.N.

Book ID
114454116
Publisher
The Institution of Electrical Engineers
Year
1984
Weight
248 KB
Volume
131
Category
Article
ISSN
0143-7100

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TiW silicide-gate technology for self-al
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โœ SS Gill; GJ Pryce; J Woodward ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 269 KB

Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs, UK A range of sputtered titanium-tungsten silicide compositions have been formed by two different approaches. The most successful has been the annealing of Ti0.3W0.7/Si multilayers to form a Ti0.3W0.7Si0.33 film. This contact ha