S-band MMIC amplifier using Ga0.51In0.49
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Yo-Sheng Lin; Shey-Shi Lu; Lan Hai; Pei-Zen Chang
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Article
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1999
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John Wiley and Sons
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English
β 213 KB
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The first MMIC amplifier using Ga In PrGaAs 0 .51 0 .49 MISFETs grown by GSMBE as acti¨e de¨ices was fabricated in our laboratory. This monolithic amplifier achie¨ed a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were c