Further studies on the synthesis of a fine neurological electrode by chemical vapor deposition processing

Study of the stacking faults in a-plane

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy