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Fundamentals of Nanoscaled Field Effect Transistors || Nanoscale Effects: Inversion Layer Quantization

✍ Scribed by Chaudhry, Amit

Book ID
120495708
Publisher
Springer New York
Year
2013
Tongue
English
Weight
536 KB
Edition
2013
Category
Article
ISBN
1461468221

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✦ Synopsis

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

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