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Fundamentals of Nanoscaled Field Effect Transistors || Nanoscale Effects: Gate Oxide Leakage Currents

✍ Scribed by Chaudhry, Amit


Book ID
120271265
Publisher
Springer New York
Year
2013
Weight
227 KB
Category
Article
ISBN
1461468221

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📜 SIMILAR VOLUMES


Fundamentals of Nanoscaled Field Effect
✍ Chaudhry, Amit 📂 Article 📅 2013 🏛 Springer New York 🌐 English ⚖ 536 KB

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl

Fundamentals of Nanoscaled Field Effect
✍ Chaudhry, Amit 📂 Article 📅 2013 🏛 Springer New York 🌐 English ⚖ 339 KB

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl

Fundamentals of Nanoscaled Field Effect
✍ Chaudhry, Amit 📂 Article 📅 2013 🏛 Springer New York 🌐 English ⚖ 104 KB

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl

Fundamentals of Nanoscaled Field Effect
✍ Chaudhry, Amit 📂 Article 📅 2013 🏛 Springer New York 🌐 English ⚖ 284 KB

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl

Fundamentals of Nanoscaled Field Effect
✍ Chaudhry, Amit 📂 Article 📅 2013 🏛 Springer New York 🌐 English ⚖ 261 KB

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl