Fundamentals of Nanoscaled Field Effect Transistors

✍ Scribed by Amit Chaudhry (auth.)

Publisher: Springer-Verlag New York
Year: 2013
Tongue: English
Leaves: 211
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

✦ Table of Contents

Front Matter....Pages i-xiv
Scaling of a MOS Transistor....Pages 1-24
Nanoscale Effects: Gate Oxide Leakage Currents....Pages 25-36
Nanoscale Effects: Inversion Layer Quantization....Pages 37-60
Dielectrics for Nanoelectronics....Pages 61-72
Germanium Technology....Pages 73-83
Biaxial s-Si Technology....Pages 85-131
Uniaxial s-Si Technology....Pages 133-152
Alternate Structures for Nanoelectronic Applications....Pages 153-167
Graphene Technology....Pages 169-175
Back Matter....Pages 177-201

✦ Subjects

Electronics and Microelectronics, Instrumentation;Electronic Circuits and Devices;Circuits and Systems;Nanoscale Science and Technology;Optical and Electronic Materials

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