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Fundamental Studies of P(GeH 3 ) 3 , As(GeH 3 ) 3 , and Sb(GeH 3 ) 3 : Practical n -Dopants for New Group IV Semiconductors

✍ Scribed by Chizmeshya, A. V. G.; Ritter, C.; Tolle, J.; Cook, C.; Menéndez, J.; Kouvetakis, J.


Book ID
126275006
Publisher
American Chemical Society
Year
2006
Tongue
English
Weight
525 KB
Volume
18
Category
Article
ISSN
0897-4756

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