Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors.

✍ Scribed by A. V. G. Chizmeshya; C. Ritter; J. Tolle; C. Cook; J. Menendez; J. Kouvetakis

• Publisher: John Wiley and Sons
• Year: 2007
• Weight: 18 KB
• Volume: 38
• Category: Article
• ISSN: 0931-7597
• DOI: 10.1002/chin.200710018