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Fundamental high-field transport properties of a GaAs/AlGaAs modulation doped heterostructure

✍ Scribed by M. Chmielowski; M. Gliński; W.H. Zhuang; G.B. Liang; D.Z. Sun; M.Y. Kong; W. Plesiewicz; T. Dietl; T. Skośkiewicz

Book ID
118362442
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
228 KB
Volume
196
Category
Article
ISSN
0039-6028

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## Abstract Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K ha