Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs/AlGaAs quantum wells

✍ Scribed by G.S Herold; H.A Nickel; J.G Tischler; B.A Weinstein; B.D McCombe

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 87 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00010-1

✦ Synopsis

Resonant magneto-absorption of far-infrared (FIR) laser radiation by neutral and negatively charged donors and free electrons, and the mechanisms of coupling of the power absorbed to various photoluminescence recombination paths in a Si-doped GaAs=AlGaAs multiple-quantum-well structure was studied by optically detected resonance (ODR) spectroscopy. A sensitive charge-coupled-device detection scheme was used to record complete PL=ODR spectra at high resolution with good signal-to-noise. The rich and complex ODR spectra were analyzed by a line-ÿtting procedure. Results on the neutral donor 1s-2p + transition show that at low FIR laster intensities, the recombination is modiÿed by processes that do not involve carrier heating. At high FIR laser intensities, carrier heating e ects dominate.