Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well

✍ Scribed by T. Takahashi; S. Matsuzaka; Y. Ohno; H. Ohno

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 272 KB
• Volume: 42
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2010.03.026

✦ Synopsis

We investigated the effective magnetic field induced by spin-orbit interaction in a gated modulationdoped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage V g . The V g -dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spin-orbit interaction in a Monte Carlo simulation. With the Dresselhaus spin-orbit coupling parameter g and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated g$13 eV Å3 .