✦ LIBER ✦

Free carrier absorption in heavily doped silicon layers

✍ Scribed by Isenberg, Joerg; Warta, Wilhelm

Book ID: 120677662
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 279 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1690105

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Free carriers in heavily doped polyacety

Free carriers in heavily doped polyacetylene

✍ Markowitsch, W.; Leising, G. 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 273 KB

Optical absorption in heavily doped sili

Optical absorption in heavily doped silicon

✍ Schmid, P. E. 📂 Article 📅 1981 🏛 The American Physical Society 🌐 English ⚖ 575 KB

Minority carrier injection into heavily

Minority carrier injection into heavily doped silicon

✍ J.W. Slotboom 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 240 KB

Free carrier absorption in silicon

✍ Schroder, D.K.; Thomas, R.N.; Swartz, J.C. 📂 Article 📅 1978 🏛 IEEE 🌐 English ⚖ 887 KB

Free Carrier Absorption in Silicon

✍ Schroder, D.K.; Thomas, R.N.; Swartz, J.C. 📂 Article 📅 1978 🏛 IEEE 🌐 English ⚖ 862 KB

Trap controlled minority-carrier mobilit

Trap controlled minority-carrier mobility in heavily doped silicon

✍ A. Neugroschel; F.A. Lindholm; C.T. Sah 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 381 KB

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed