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Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

✍ Scribed by Lu, T.; Pan, W.; Tsui, D.; Lee, C.-H.; Liu, C.


Book ID
111903209
Publisher
The American Physical Society
Year
2012
Tongue
English
Weight
340 KB
Volume
85
Category
Article
ISSN
1098-0121

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Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc