𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of β-SiC layers on heated silicon wafers exposed to sublimed carbon

✍ Scribed by P. Durupt; J.P. Gauthier; J.A. Roger; J. Pivot


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
164 KB
Volume
85
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Formation of epitaxial β-SiC layers by f
✍ S. Henke; M. Philipp; B. Rauschenbach; B. Stritzker 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 301 KB

By condensation of C6o and C7o fullerenes the formation of continuous, thick epitaxial t-SiC films on Si(001) and Si(lll) surfaces is possible, even at moderate temperatures (700 °C-1000 °C). The dependence of structure, topography, and composition of the epitaxial silicon carbide layers formed by C