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Formation of the interface between an oxide and a high-polymer solution

✍ Scribed by Yu. M. Mosin; A. F. Krivoshchepov; G. G. Shikhieva; A. V. Bulynko

Book ID
105607175
Publisher
Springer US
Year
1997
Tongue
English
Weight
380 KB
Volume
54
Category
Article
ISSN
0361-7610

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The ability of the semiconductor industry to continue scaling microelectronic devices to ever smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical effects: as the thickness of conventional silicon dioxide (SiO(2)) gate insulators is reduced to just a few atomic layers,