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Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation

✍ Scribed by Iqbal, M. Z.; Siddique, Salma; Iqbal, M. W.; Eom, Jonghwa

Book ID: 120408379
Publisher: The Royal Society of Chemistry
Year: 2013
Tongue: English
Weight: 409 KB
Volume: 1
Category: Article
ISSN: 2050-7526
DOI: 10.1039/c3tc30232f

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