✦ LIBER ✦

Formation of magnesium nitride layers on the Mg(0001) surface by ion implantation

✍ Scribed by X.D. Peng; D.S. Edwards; M.A. Barteau

Publisher: Elsevier Science
Year: 1987
Weight: 57 KB
Volume: 185
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(87)90310-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The formation of buried oxide layers by

The formation of buried oxide layers by ion implantation

✍ TA Woods; E Antonelli; RA Collins; DJ Chivers; G Dearnaley 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 460 KB

Yttrium ion implantation on the surface

Yttrium ion implantation on the surface properties of magnesium

✍ X.M. Wang; X.Q. Zeng; G.S. Wu; S.S. Yao 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 790 KB

Properties of epitaxial silicon layers o

Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation

✍ W Skorupa; U Kreissig; H Oertel; H Bartsch 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 530 KB

Effects of ion implantation on nitriding

Effects of ion implantation on nitriding metal by the plasma source nitriding

✍ M Nunogaki; H Suezawa; Y Kuratomi; K Miyazaki 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 396 KB

The formation of buried Si3N4 layers in

The formation of buried Si3N4 layers in silicon by high dose nitrogen ion implantation

✍ U. Kreissig; W. Skorupa; E. Hensel 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 177 KB

The formation of buried layers by high-d

The formation of buried layers by high-dose ion-implantation in Si : A TEM study

✍ A. De Veirman; J. Van Landuyt 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 278 KB

The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for