We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. Such a distinct lateral ordering of QDs is achieved on a planar GaAs(1 0 0) rather than on a prepatterned substrate by strain-mediated mul
β¦ LIBER β¦
Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates
β Scribed by Kouichi Akahane; Huaizhe Xu; Yoshitaka Okada; Mitsuo Kawabe
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 225 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Distinct two dimensional lateral orderin
β
W.Q. Ma; Y.W. Sun; X.J. Yang; D.S. Jiang; L.H. Chen
π
Article
π
2008
π
Elsevier Science
π
English
β 240 KB
Optical properties of self-assembled InA
β
P.P. GonzΓ‘lez-Borrero; E. Marega Jr; D.I. Lubyshev; E. Petitprez; P. Basmaji
π
Article
π
1997
π
Elsevier Science
π
English
β 136 KB
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present