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Formation of intrinsic defects and amorphous transition of crystals stimulated by the recombination of electronic excitations

✍ Scribed by V. N. Strekalov

Book ID
112428391
Publisher
Springer
Year
1989
Tongue
English
Weight
306 KB
Volume
32
Category
Article
ISSN
1573-9228

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In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.