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Excitation of intrinsic defects in ionic crystals by high-power optical and electron beams

โœ Scribed by V. I. Baryshnikov; T. A. Kolesnikova

Book ID
110118543
Publisher
SP MAIK Nauka/Interperiodica
Year
1998
Tongue
English
Weight
126 KB
Volume
40
Category
Article
ISSN
1063-7834

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Extended Defects Formation in Si Crystal
Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM
โœ Fedina, L. ;Gutakovskii, A. ;Aseev, A. ;Van Landuyt, J. ;Vanhellemont, J. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 515 KB

In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.