✦ LIBER ✦

Formation of heavily doped n-type layers in GaAs by multiple ion implantation

✍ Scribed by E. B. Stoneham; G. A. Patterson; J. M. Gladstone

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of n+-Layers in Undoped and In

✍ Chaldyshev, V. V. ;Dymova, N. N. ;Kunitsyn, A. E. ;Markov, A. V. 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 202 KB 👁 2 views

Formation of heavily doped semiconductor

✍ R.M. Bayazitov; L.Kh. Zakirzyanova; I.B. Khaibullin; G.E. Remnev 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 396 KB

Formation of a heavily B doped diamond l

✍ Tsubouchi, Nobuteru; Ogura, Masahiko; Chayahara, Akiyoshi; Okushi, Hideyo 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 414 KB

Absorption spectrum of heavily doped n-t

✍ M. A. Krivov; V. P. Red'ko; P. E. Ramazanov; A. P. Mamontov; D. L. Budnitskii 📂 Article 📅 1969 🏛 Springer 🌐 English ⚖ 129 KB

N type doping of inp by ion implantation

✍ R. S. Sussmann 📂 Article 📅 1983 🏛 Springer US 🌐 English ⚖ 647 KB

Temperature dependence of mobility in he

✍ Z. Feit; A. Zemel; D. Eger; S. Szapiro 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 344 KB