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Formation of Dislocations in InGaAs/GaAs Heterostructures

✍ Scribed by Katcki, J. ;Ratajczak, J. ;Adamczewska, J. ;Phillipp, F. ;Jin-Phillipp, N. Y. ;Regiński, K. ;Bugajski, M.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
316 KB
Volume
171
Category
Article
ISSN
0031-8965

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✍ Yih-Juan Li; Jan-Shing Su; Yu-Shyan Lin; Wei-Chou Hsu 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 154 KB

An InGaAS/GaAs heterostructure transistor utilizing a graded In x Ga 1-x As channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the grad