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Formation of CuIn(1-x)GaxSe2 (CIGS) by Electrochemical Atomic Layer Deposition (ALD)

โœ Scribed by Banga, D.; Perdue, B.; Stickney, J.

Book ID
124161065
Publisher
The Electrochemical Society
Year
2014
Tongue
English
Weight
900 KB
Volume
161
Category
Article
ISSN
0013-4651

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Ternary semiconductor compounds CuInS2 (
Ternary semiconductor compounds CuInS2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)
โœ Shaoxiong Lin; Xuezhao Shi; Xin Zhang; Huanhuan Kou; Chunming Wang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 355 KB

In this paper the formation and characterization of the I-III-VI 2 semiconductor compound CuInS 2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetr