Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems

✍ Scribed by M. D. Vilisova; I. V. Ivonin; T. V. Korableva; L. G. Lavrent'eva; V. S. Lukash; S. V. Subach; I. T. Shulepov; M. P. Yakubenya

• Publisher: Springer
• Year: 1999
• Tongue: English
• Weight: 588 KB
• Volume: 42
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/bf02508239