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Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

✍ Scribed by Kim, Gun Hee; Shin, Hyun Soo; Ahn, Byung Du; Kim, Kyung Ho; Park, Won Jun; Kim, Hyun Jae

Book ID
121812441
Publisher
The Electrochemical Society
Year
2009
Tongue
English
Weight
282 KB
Volume
156
Category
Article
ISSN
0013-4651

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p