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Formation and cleavage of the silicon-silicon bond in disilane

✍ Scribed by R.C. Kennedy; L.P. Freeman; A.P. Fox; M.A. Ring


Book ID
118906030
Publisher
Elsevier Science
Year
1966
Weight
259 KB
Volume
28
Category
Article
ISSN
0022-1902

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The formation of thin silicon carbide films for various uses is of technological intercst but still presents some problems. In many cases. the film produced has an cxccss or deficiency of carbon or silicon.[lJ One reason for this is that the precursor gas generally used is a mixture of several compo